ds31115 rev. 4 - 3 1 of 4 www.diodes.com DZT751 ? diodes incorporated new product not recommended for new design use fzt751 DZT751 low v ce(sat) pnp surface mo unt transistor features ? epitaxial planar die construction ? complementary npn type available (dzt651) ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? lead free by design/rohs compliant (note 1) ? ?green? device (note 2) mechanical data ? case: sot-223 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish ? matte ti n annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking & type code information: see page 4 ? ordering information: see page 4 ? weight: 0.115 grams maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v continuous collector current i c -3 a peak pulse collector current i cm -6 a thermal characteristics characteristic symbol value unit power dissipation @ t a = 25c p d 1 (note 3) 2 (note 4) w thermal resistance, junction to ambient air (note 3) @t a = 25c r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our websit e at http://www.diodes.com/p roducts/lead_free/index.php. 3. device mounted on fr-4 pcb, pad layout as shown on last page or in diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes .com/datasheets/ap02001.pdf, or on page 4 of this data sheet. 4. device mounted on polyimide pcb with 1.8cm 2 copper area. sot-223 top view schematic and pin configuration 2,4 3 1 collector emitte r base 4 3 2 1 c c b e
ds31115 rev. 4 - 3 2 of 4 www.diodes.com DZT751 ? diodes incorporated new product not recommended for new design use fzt751 electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) collector-base breakdown voltage v ( br ) cbo -80 ? ? v i c = -100 a, i e = 0 collector-emitter breakdown voltage v ( br ) ceo -60 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo -5 ? ? v i e = -100 a, i c = 0 collector cutoff current i cbo ? ? -0.1 -10 a a v cb = -60v, i e = 0 v cb = -60v, i e = 0, t a = 100 c emitter cutoff current i ebo ? ? -0.1 a v eb = -4v, i c = 0 on characteristics (note 5) collector-emitter saturation voltage v ce(sat) ? ? -0.08 -0.2 -0.3 -0.6 v v i c = -1a, i b = -100ma i c = -3a, i b = -300ma base-emitter saturation voltage v be ( sat ) ? -0.9 -1.25 v i c = -1a, i b = -100ma base-emitter turn-on voltage v be ( on ) ? -0.8 -1 v v ce = -2v, i c = -1a dc current gain h fe 70 100 80 40 200 180 160 140 ? 300 ? ? ? v ce = -2v, i c = -50ma v ce = -2v, i c = -500ma v ce = -2v, i c = -1a v ce = -2v, i c = -2a ac characteristics transition frequency f t 100 145 ? mhz v ce = -5v, i c = -100ma, f = 100mhz output capacitance c obo ? ? 30 pf v cb = -10v, f = 1mhz switching times t on t off ? ? 45 200 ? ? ns ns v cc = -10v, i c = -500ma, i b1 = i b2 = -50ma notes: 5. pulse test: pulse width 300 s. duty cycle 2.0%. 0 0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 p , p o we r dissi p a t i o n (w) d t , ambient temperature ( c) a fig. 1 power dissipation vs. ambient temperature (note 3) -v , collector-emitter voltage (v) fig. 2 typical collector current vs. collector-emitter voltage ce 01 2 3 45
ds31115 rev. 4 - 3 3 of 4 www.diodes.com DZT751 ? diodes incorporated new product not recommended for new design use fzt751 -i , collector current (a) fig. 3 typical dc current gain vs. collector current c 0 50 100 150 200 250 300 350 400 -i collector current (a) fig. 4 typical collector-emitter saturation voltage vs. collector current c , 0 0.05 0.1 0.15 0.2 0.25 0.3 1 -i collector current (a) fig. 5 typical base-emitter turn-on voltage vs. collector current c , -i collector current (a) fig. 6 typical base-emitter saturation voltage vs. collector current c , v reverse voltage (v) fig. 7 typical capacitance characteristics r , 0 50 100 150 200 250 300 350 400 -i , collector current (ma) c f , current gain-bandwidth product (mhz) t fig. 8 typical gain-bandwidth product vs. collector current 0 50 100 150 200 010 2030405060708090100 v = -10v f = 100mhz ce
ds31115 rev. 4 - 3 4 of 4 www.diodes.com DZT751 ? diodes incorporated new product not recommended for new design use fzt751 ordering information (note 6) device packaging shipping DZT751-13 sot-223 2500/tape & reel notes: 6. for packaging details, please go to our website at http ://www.diodes.c om/ap02007.pdf. marking information package outline dimensions suggested pad layout (unit: mm) important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated. sot-223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3.50 e1 6.90 7.10 7.00 e ? ? 4.60 e1 ? ? 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm kp2 = product type marking code yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52 kp2 y w w (top view)
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